论文标题

氮化扫描剂作为光电子人工突触设备的网关III氮化物半导体

Scandium Nitride as a Gateway III-Nitride Semiconductor for Optoelectronic Artificial Synaptic Devices

论文作者

Rao, Dheemahi, Saha, Bivas

论文摘要

基于von Neumann架构的传统计算受到存储和处理单元之间数据传输的时间和能量消耗的限制。冯·诺伊曼(Von Neumann)体系结构在解决非结构化,概率和实时问题方面也效率低下。为了应对这些挑战,需要一种新的脑启发的神经形态计算体系结构。由于缺乏电阻电容(RC)延迟,较高的带宽和低功率消耗,因此光电子人工突触设备非常有吸引力。尚未证明稳定,可扩展和互补的金属 - 氧化物 - 氧化 - 氧化物 - 氧化物 - 氧化型突触。在这项工作中,未前木和镁掺杂的氮化镁(SCN)的光导不传统等同于负责记忆和学习的生物突触的抑制性和兴奋性突触可塑性。展示了生物突触的主要功能,例如短期记忆(STM),长期记忆(LTM),从STM到LTM的过渡,学习和遗忘,频率选择性的光学滤波,频率依赖性增强和抑郁,Hebbian学习,Hebbian学习和逻辑门操作。

Traditional computation based on von Neumann architecture is limited by the time and energy consumption due to data transfer between the storage and the processing units. The von Neumann architecture is also inefficient in solving unstructured, probabilistic, and real-time problems. To address these challenges, a new brain-inspired neuromorphic computational architecture is required. Due to absence of resistance-capacitance (RC) delay, high bandwidth and low power consumption, optoelectronic artificial synaptic devices are highly attractive. Yet stable, scalable, and complementary-metal-oxide-semiconductor (CMOS)-compatible synapses have not been demonstrated. In this work, persistence in the photoconductivity of undoped and magnesium-doped scandium nitride (ScN) is equated to the inhibitory and excitatory synaptic plasticity of the biological synapses responsible for memory and learning. Primary functionalities of a biological synapse like short-term memory (STM), long-term memory (LTM), the transition from STM-to-LTM, learning and forgetting, frequency-selective optical filtering, frequency-dependent potentiation and depression, Hebbian learning, and logic gate operations are demonstrated.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源