论文标题
水印的重新兰氏：一种防止假冒记忆芯片的技术
Watermarked ReRAM: A Technique to Prevent Counterfeit Memory Chips
论文作者
论文摘要
电子伪造是一个长期存在的问题，对许多部门的长期影响不利，仍在上升。本文通过通过切换（SET/RESET）操作来防止伪造，通过操纵其模拟物理特性来嵌入具有电阻-RAM（RERAM）的设备中的水印中的新型低成本技术。我们开发了一个系统级框架，以控制记忆细胞的物理特性，以将不可逆的水印烙印到商业重新兰异中，这些水印将通过感测细胞的物理性质的变化来检索。实验结果表明，我们提出的RERAM水印在温度变化方面具有鲁棒性，并且可接受的速度为〜0.6位/分钟的印迹和〜15.625bits/s的检索速率。
Electronic counterfeiting is a longstanding problem with adverse long-term effects for many sectors, remaining on the rise. This article presents a novel low-cost technique to embed watermarking in devices with resistive-RAM (ReRAM) by manipulating its analog physical characteristics through switching (set/reset) operation to prevent counterfeiting. We develop a system-level framework to control memory cells' physical properties for imprinting irreversible watermarks into commercial ReRAMs that will be retrieved by sensing the changes in cells' physical properties. Experimental results show that our proposed ReRAM watermarking is robust against temperature variation and acceptably fast with ~0.6bit/min of imprinting and ~15.625bits/s of retrieval rates.
