论文标题
跟踪石墨烯/GE（110）的界面变化（110）退火期间
Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing
论文作者
论文摘要
通过拉曼光谱获得的石墨烯质量指标已与石墨烯/锗界面的结构变化相关，这是空中热退火的函数。具体而言，发现石墨烯在650°C下显着缺陷。通过结合扫描隧道显微镜，X射线光电子光谱和近边缘X射线吸收精细的结构光谱，我们得出结论，这些缺陷是由于释放了在石墨烯/晶元界面上捕获的H_ {2}气体。在从GE（110）表面到底物中表面重建的出现的过渡后，产生了H_ {2}气体。有趣的是，在退火至800°C时，在石墨烯中观察到一个完整的自我修复过程。在石墨烯/锗界面上发生的显微镜变化与石墨烯的缺陷密度之间的微妙相互作用对于促进石墨烯的生长，控制的2d-3d异质材料接口和半导体的集成制造技术很有价值。
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 °C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy, we conclude that these defects are due to the release of H_{2} gas trapped at the graphene/Germanium interface. The H_{2} gas was produced following the transition from the as-grown hydrogen-termination of the Ge(110) surface to the emergence of surface reconstructions in the substrate. Interestingly, a complete self-healing process is observed in graphene upon annealing to 800 °C. The subtle interplay revealed between the microscopic changes occurring at the graphene/Germanium interface and graphene's defect density is valuable for advancing graphene growth, controlled 2D-3D heterogeneous materials interfacing and integrated fabrication technology on semiconductors.
