论文标题
使用扫描微波阻抗显微镜在V2O3中直接可视化金属绝缘体过渡
Direct visualization of percolating metal-insulator transition in V2O3 using scanning microwave impedance microscopy
论文作者
论文摘要
使用广泛研究的V2O3作为原型系统，我们研究了渗透在金属 - 绝缘体过渡（MIT）中的作用。我们应用扫描微波阻抗显微镜直接确定金属相位分数P并将其与宏观电导g相关联G，当P达到Percolation阈值时，这表明突然跳跃。有趣的是，电导G表现出针对P的滞后行为，表明在冷却和变暖时两种不同的渗透过程。基于我们的图像分析和模型模拟，我们将这种滞后行为归因于冷却和变暖之间的不同结构域成核和生长过程，这很可能是由于MIT期间V2O3中的结构和电子过渡引起的。我们的工作提供了微观的观点，即结构和电子自由度的相互作用如何影响密切相关的系统中的MIT。
Using the extensively studied V2O3 as a prototype system, we investigate the role of percolation in metal-insulator transition (MIT). We apply scanning microwave impedance microscopy to directly determine the metallic phase fraction p and relate it to the macroscopic conductance G, which shows a sudden jump when p reaches the percolation threshold. Interestingly, the conductance G exhibits a hysteretic behavior against p, suggesting two different percolating processes upon cooling and warming. Based on our image analysis and model simulation, we ascribe such hysteretic behavior to different domain nucleation and growth processes between cooling and warming, which is likely caused by the decoupled structural and electronic transitions in V2O3 during MIT. Our work provides a microscopic view of how the interplay of structural and electronic degrees of freedom affects MIT in strongly correlated systems.
