论文标题
紧张的HBN自旋缺陷的相关纳米级成像
Correlative nanoscale imaging of strained hBN spin defects
论文作者
论文摘要
六角形硝化硼（HBN）中带负电荷的硼空缺颜色中心（$ v_b^ - $）之类的旋转缺陷可能会在分层范德华异质结构中具有近表面缺陷的新形式的量子传感。在这里，我们揭示了与HBN薄片中的折痕相关的菌株对$ v_b^ - $和$ v_b $ color Collecters in HBN具有相关性阴性发光和光致发光显微镜的影响。我们观察到$ v_b^ - $发光在折痕处的强烈局部增强和红变，与密度功能理论计算一致，显示$ v_b^ - 向具有中度单轴压缩应变的区域迁移。用高度局部应变来操纵这些自旋缺陷的能力为将来的2D量子传感器提供了有趣的可能性。
Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies. We observe strong localized enhancement and redshifting of the $V_B^-$ luminescence at creases, consistent with density functional theory calculations showing $V_B^-$ migration toward regions with moderate uniaxial compressive strain. The ability to manipulate these spin defects with highly localized strain offers intriguing possibilities for future 2D quantum sensors.
