论文标题
基于直接连接的离子束诱导沉积技术，纳米Quids的磁通量变化的大输出电压
Large output voltage to magnetic flux change in nanoSQUIDs based on direct-write Focused Ion Beam Induced Deposition technique
论文作者
论文摘要
纳米喹啉是量子传感器，在检测具有高灵敏度和高空间分辨率的磁通量较小时表现出色。在这里，我们采用了无抵抗的直接射击GA+浓缩的离子束诱导的沉积（Fibid）技术来生长W-C纳米晶，并研究了它们对磁通变化的电响应。值得注意的是，Fibid允许快速（$ 3〜 \ MATHRM {nm} $）增长$ 700〜 \ Mathrm {nm} \ times 300〜 \ Mathrm {nm} $ Dayem-dayem-bridge nanosquids nanosquids基于狭窄的纳米线（$ 50〜 \ mathrm} $ {NM} $ {观察到的传输系数（输出电压与磁通量变化）非常高（高达$ 1301〜 \ MATHRM {μV/φ_0} $），这与正常状态下的W-C的高电阻率相关。我们在这里讨论这种方法减少纳米晶的活性区域以获得空间分辨率的潜力，并在悬臂上进行扫描式应用程序的整合。
NanoSQUIDs are quantum sensors that excel in detecting a small change in magnetic flux with high sensitivity and high spatial resolution. Here, we employ resist-free direct-write Ga+ Focused Ion Beam Induced Deposition (FIBID) techniques to grow W-C nanoSQUIDs, and we investigate their electrical response to changes in the magnetic flux. Remarkably, FIBID allows the fast ($3~\mathrm{nm}$) growth of $700~\mathrm{nm}\times 300~\mathrm{nm}$ Dayem-bridge nanoSQUIDs based on narrow nanowires ($50~\mathrm{nm}$ wide) that act as Josephson junctions. The observed transfer coefficient (output voltage to magnetic flux change) is very high (up to $1301~\mathrm{μV/Φ_0}$), which correlates with the high resistivity of W-C in the normal state. We discuss here the potential of this approach to reduce the active area of the nanoSQUIDs to gain spatial resolution as well as their integration on cantilevers for scanning-SQUID applications.
