论文标题
srtio $ _3 $生长的FESE薄膜中的界面超导性
Interface superconductivity in FeSe thin films on SrTiO$_3$grown by the PLD technique
论文作者
论文摘要
在这项研究中，我们使用脉冲激光沉积（PLD）制造了5-30 nm厚的FESE/STO膜。成长的电影表现出超导性，具有$ t _ {\ mathrm {c}} $的发作性，比在环境压力下的大量FESE高得多。观察到的$ t _ {\ mathrm {c}} $值在应变与$ t _ {\ mathrm {c}} $迄今为止建立的同一材料的关系方面非常高。此外，$ t _ {\ mathrm {c}} $随着膜厚度的减小而增加，除了薄膜比10 nm薄。 $ t _ {\ mathrm {c}} $的厚度依赖性与分子束外跑（MBE）所报告的膜报告的结果非常吻合，这些膜表现出界面超导性。这些结果表明在PLD生长的FESE/STO中实现了界面超导性。此外，我们的PLD技术不需要解放后才能实现界面超导性，这与MBE技术不同。因为PLD技术的优势是可以通过简单地改变目标材料来轻松制造各种接口，因此我们的结果开放了新的新型途径，以通过系统控制来研究界面对较高$ t _ {\ mathrm {c}} $的界面超导性。
In this study, we fabricate 5-30-nm-thick films of FeSe/STO using pulsed laser deposition (PLD). The grown films exhibit superconductivity with an onset $T_{\mathrm{c}}$ that is much higher than that of bulk FeSe under ambient pressure. The observed $T_{\mathrm{c}}$ values are exceptionally high in terms of the strain vs. $T_{\mathrm{c}}$ relationship of the same material established so far. Furthermore, $T_{\mathrm{c}}$ increases as the film thickness decreases, except for films thinner than 10 nm. This thickness dependence of $T_{\mathrm{c}}$ is in good agreement with the results reported for films grown by molecular beam epitaxy (MBE) that exhibit interface superconductivity. These results indicate the realization of interface superconductivity in PLD-grown FeSe/STO. Furthermore, our PLD technique requires no post-annealing to realize interface superconductivity, which is different from MBE techniques. Because the PLD technique has the advantage that various interfaces can be fabricated easily by simply altering the target materials, our results open novel routes to study interface superconductivity toward higher $T_{\mathrm{c}}$ by systematic control of the interface.
