论文标题

在BAO/SRTIO3界面形成高迁移率的二维电子气体

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

论文作者

Cao, Cheng, Chen, Shengru, Deng, Jun, Li, Gang, Zhang, Qinghua, Gu, Lin, Ying, Tian-ping, Guo, Er-Jia, Guo, Jian-Gang, Chen, Xiaolong

论文摘要

在两个绝缘氧化物之间的界面形成的二维电子气体(2DEG)为基础研究和设备应用提供了机会。二元碱土金属氧化物具有与硅和钙钛矿氧化物兼容的晶格常数,具有桥接这两种材料类别的多功能性类别的巨大潜力。在这里,我们报告了岩石盐BAO和SRTIO3之间的接口上2DEG的形成。最高的电子迁移率达到69000 cm^2 v.s^-1在2 K处,导致高磁场下典型的Shubniko de Haas(SDH)振荡。在不同场角处的SDH振荡的存在揭示了费米表面的准两维特征。第一原理的计算表明,在接口处,从BAO到Ti 3dxy轨道的有效电荷转移是指观察到的高载体迁移率的原因。我们的结果表明,BAO/STO异源面是一个用于探索相关量子阶段的平台,打开了低功率和中学电子设备的门。

Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with both silicon and perovskite oxides, exhibiting an enormous potential to bridging those two materials classes for multifunctionalities. Here we report the formation of 2DEG at the interface between the rock-salt BaO and SrTiO3. The highest electron mobility reaches 69000 cm^2 V.S^-1 at 2 K, leading to the typical Shubniko de Haas (SdH) oscillations under the high magnetic fields. The presence of SdH oscillations at different field-angles reveals a quasi-two-dimensional character of the Fermi surface. The first-principles calculations suggest that the effective charge transfer from the BaO to Ti 3dxy orbital at the interfaces is responsible to the observed high carrier mobility. Our results demonstrate that the BaO/STO heterointerface is a platform for exploring the correlated quantum phases, opening a door to the low-power and mesoscopic electronic devices.

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