论文标题
以增强的近红外敏感性增强的背面倾斜的硅硅硅接线
A Backside-Illuminated Charge-Focusing Silicon SPAD with Enhanced Near-Infrared Sensitivity
论文作者
论文摘要
提出了一个背面释放的（BSI）近红外增强的硅单光雪崩二极管（SPAD），以进行飞行时间（TOF）光检测和范围应用。该检测器包含一个2 $ $ m宽的乘法区域，其球场线拥挤强制执行了球形均匀的电场峰。以电荷为目标的电场扩展到10 $ $ m深的吸收量，从而在设备的所有角落生成的电子可以有效地向乘法区域移动。 SPAD与定制的130 nm CMOS技术和专用BSI流程集成在一起。该设备的音高为15 $ $ m，有可能缩小缩小而不会大幅度损失。此外，检测器在905 nm处达到27％的光子检测效率，超过3.5 V，由集成的CMOS电子控制，定时分辨率为240 PS。凭借这些功能，设备体系结构非常适合具有集成电子设备的大格式TOF成像阵列。
A backside-illuminated (BSI) near-infrared enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The detector contains a 2 $μ$m wide multiplication region with a spherically-uniform electric field peak enforced by field-line crowding. A charge-focusing electric field extends into a 10 $μ$m deep absorption volume, whereby electrons generated in all corners of the device can move efficiently towards the multiplication region. The SPAD is integrated with a customized 130 nm CMOS technology and a dedicated BSI process. The device has a pitch of 15 $μ$m, which has the potential to be scaled down without significant performance loss. Furthermore, the detector achieves a photon detection efficiency of 27% at 905 nm, with an excess bias of 3.5 V that is controlled by integrated CMOS electronics, and a timing resolution of 240 ps. By virtue of these features, the device architecture is well-suited for large format ToF imaging arrays with integrated electronics.
