论文标题
激子 - 抛出量扩散系数的微观模型在原子薄的半导体中
Microscopic modelling of exciton-polariton diffusion coefficients in atomically thin semiconductors
论文作者
论文摘要
在强烈的光耦合方案中，实现了例如通过将半导体整合到光学微腔内，形成了新型杂交光晶体的偏振子。分散关系的相应变化对半导体的光学，动力学和运输行为有很大影响。在这项工作中，我们调查了HBN封装的摩西$ _2 $单层专注于激子 - 帕利顿扩散的强耦合方案。采用基于激子密度矩阵形式主义与Hopfield方法相结合的微观方法，我们预测，在强耦合方面，扩散系数的急剧增加将急剧增加。我们解释了较大的极性群体速度，并相对于裸露的激子抑制了极化的phon-phonon散射通道。我们的研究有助于更好地了解原子薄的半导体中极化的扩散。
In the strong light-matter coupling regime realized e.g. by integrating semiconductors into optical microcavities, polaritons as new hybrid light-matter quasi-particles are formed. The corresponding change in the dispersion relation has a large impact on optics, dynamics and transport behaviour of semiconductors. In this work, we investigate the strong-coupling regime in hBN-encapsulated MoSe$_2$ monolayers focusing on exciton-polariton diffusion. Applying a microscopic approach based on the exciton density matrix formalism combined with the Hopfield approach, we predict a drastic increase of the diffusion coefficients by two to three orders of magnitude in the strong coupling regime. We explain this behaviour by the much larger polariton group velocity and suppressed polariton-phonon scattering channels with respect to the case of bare excitons. Our study contributes to a better microscopic understanding of polariton diffusion in atomically thin semiconductors.
