论文标题
（CD，MN）TE样品中的表面重组和空间充电限值光电压（PC-V）测量。光电流的动力学（PC）
Surface recombination and space-charge-limited photocurrent-voltage (PC-V) measurements in (Cd,Mn)Te samples. Kinetics of photocurrent (PC)
论文作者
论文摘要
光电流电压特性（PC-V）是确定X射线和伽马射线检测器板中的临界参数的一种方法，即载体迁移率 - 寿命乘积，Mt。我们在（CD，MN）TE样品上显示的测量结果在很大程度上取决于表面处理和电荷空间分布。 EG和HV〜EG获得的PC-V特性表明，在（CD，MN）TE样品表面（CD，MN）TE样品表面蚀刻20％HCl的蚀刻出现很大浓度非常浅的表面陷阱。这些陷阱严重改变了PC-V特性和PC动力学的测量值。我们还注意到，孔对PC动力学的光电导率的贡献很小。 HV> EG的PC-V特性测量值可能会测试检测板表面质量。
Photocurrent-voltage characteristic (PC-V) is a method of determining the critical parameter in X-ray and gamma-ray detector plates, i.e., the carrier mobility - lifetime product, mt. We show on the (Cd,Mn)Te samples that the measurement results depend strongly on the surface treatment and the charge space distribution. The PC-V characteristics obtained for hv > Eg and hv ~ Eg indicated that etching with 20% HCl caused an appearance of a significant concentration of very shallow surface traps at the (Cd,Mn)Te sample surface. These traps seriously changed the measurements of PC-V characteristics and PC kinetics. We also noticed a small contribution of holes to photoconductivity in the PC kinetics. The PC-V characteristics measurements for hv > Eg may test the detector plate surface quality.
