论文标题
通过选择性变黑，用于升华的CNOT闸门
CNOT gates for fluxonium qubits via selective darkening of transitions
论文作者
论文摘要
我们分析了磁通电路的交叉谐振效应，并根据过渡的选择性变黑研究了两分栅极方案。在这种方法中，同时使用两个微波脉冲，以振幅之间的适当比率同时应用，以实现无法控制的操作。我们详细研究相干栅极动力学并计算门误差。有了单身效果的考虑，我们证明了$ 10^{ - 4} $以下的门错误对于逼真的硬件参数是可能的。该数字是由较长的计算过渡和强大的磁通性的连贯性时间促进的，这很容易阻止在栅极微波驱动过程中激发对较高激发态的激发。
We analyze the cross-resonance effect for fluxonium circuits and investigate a two-qubit gate scheme based on selective darkening of a transition. In this approach, two microwave pulses at the frequency of the target qubit are applied simultaneously with a proper ratio between their amplitudes to achieve a controlled-NOT operation. We study in detail coherent gate dynamics and calculate gate error. With nonunitary effects accounted for, we demonstrate that gate error below $10^{-4}$ is possible for realistic hardware parameters. This number is facilitated by long coherence times of computational transitions and strong anharmonicity of fluxoniums, which easily prevents excitation to higher excited states during the gate microwave drive.
