论文标题
电子 - 电子相互作用和弱抗钙化效应在过渡金属二甲基元素超导体中
Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor
论文作者
论文摘要
在无序的过渡金属元素化(TMD)超导体中,强的自旋轨道耦合(SOC)和疾病对超导性都显着影响。但是,很少直接检测到SOC和混乱的特征。在这里,我们报告了由TMD超导体1T-NBSETE中SOC与混乱相互作用引起的量子传输行为。在进入超导状态之前,低温下的单晶体显示出电阻率上升,T1/2取决于且对所施加的磁场不敏感。低温下的磁扰(MR)在高磁场处显示出H1/2的依赖性。这些特征与无序导体中的电子电子相互作用(EEI)非常吻合。此外,低磁场的上流变化和MR表明,材料中强SOC产生的弱抗钙作用(WAL)效应的贡献。此外,不同样品中传输特征的定量分析意味着需要进一步了解异常的增强超导性。结果揭示了该疾病增强了EEI和强大的SOC诱导1T-NBSETE的WAL效应,这说明了广泛研究的掺杂超导体中的电阻率最小。这项工作还提供了对疾病对超导性影响的见解。
In disordered transition-metal dichalcogenide (TMD) superconductor, both the strong spin-orbit coupling (SOC) and disorder show remarkable effects on superconductivity. However, the features of SOC and disorder were rarely detected directly. Here we report the quantum transport behaviors arising from the interplay of SOC and disorder in the TMD superconductor 1T-NbSeTe. Before entering the superconducting state, the single crystal at low temperature shows a resistivity upturn, which is T1/2 dependent and insensitive to the applied magnetic fields. The magnetoresistance (MR) at low temperatures shows a H1/2 dependence at high magnetic fields. The characteristics are in good agreement with the electron-electron interaction (EEI) in a disordered conductor. In addition, the upturn changes and MR at low magnetic fields suggest the contribution of weak antilocalization (WAL) effect arising from the strong SOC in the material. Moreover, the quantitative analyses of the transport features in different samples imply anomalous disorder-enhanced superconductivity that needs to be further understood. The results reveal the disorder enhanced EEI and the strong SOC induced WAL effect in 1T-NbSeTe, which illustrate the resistivity minimum in the widely studied doped superconductors. The work also provides insights into the disorder effect on the superconductivity.