论文标题

分子薄的有机$ - $无机混合ruddlesden $ - $ popper perovskites及其边缘电子特性调制的强度边缘应力

Strong Edge Stress in Molecularly Thin Organic$-$Inorganic Hybrid Ruddlesden$-$Popper Perovskites and Modulations of Their Edge Electronic Properties

论文作者

Kripalani, Devesh R., Cai, Yongqing, Lou, Jun, Zhou, Kun

论文摘要

有机$ - $无机杂种Ruddlesden $ - $ Popper Perovskites(HRPPS)由于其高水分耐药性,良好的环境条件下的良好处理和较长的功能寿命而引起了光电应用的关注。最近在分离分子薄的杂种钙钛矿纳米片及其有趣的边缘现象方面的成功提出了理解边缘的作用以及决定其基本行为的特性。在这项工作中,我们通过考虑单层(BA)$ _ 2 $ pbi $ _4 $作为代表性系统,对超薄混合钙蛋白酶的边缘效应进行了典型研究。基于纳米苯模型的第一原理模拟,我们表明,除了边缘八面体网络的显着扭曲外,材料中还存在强边应力。边缘应力引起的结构不稳定性可以推动放松过程,并在实践中占据边缘的形态反应。带有边缘效应的较窄丝带上的带带的向下偏移,有助于光兴奋的载体的分离(电子向边缘移动,孔向纳米片的内部移动)。此外,在自由边缘,有机分子的解吸能也可能要低得多,从而使功能化和/或替代事件更容易。这项工作中报道的结果阐明了负责HRPP中边缘状态的基本机制,对于指导高性能层$ - $边缘设备的合理设计和开发非常重要。

Organic$-$inorganic hybrid Ruddlesden$-$Popper perovskites (HRPPs) have gained much attention for optoelectronic applications due to their high moisture resistance, good processibility under ambient conditions, and long functional lifetimes. Recent success in isolating molecularly thin hybrid perovskite nanosheets and their intriguing edge phenomena have raised the need for understanding the role of edges and the properties that dictate their fundamental behaviours. In this work, we perform a prototypical study on the edge effects in ultrathin hybrid perovskites by considering monolayer (BA)$_2$PbI$_4$ as a representative system. Based on first-principles simulations of nanoribbon models, we show that in addition to significant distortions of the octahedra network at the edges, strong edge stresses are also present in the material. Structural instabilities that arise from the edge stress could drive the relaxation process and dominate the morphological response of edges in practice. A clear downward shift of the bands at the narrower ribbons, as indicative of the edge effect, facilitates the separation of photo-excited carriers (electrons move towards the edge and holes move towards the interior part of the nanosheet). Moreover, the desorption energy of the organic molecule can also be much lower at the free edges, making it easier for functionalization and/or substitution events to take place. The findings reported in this work elucidate the underlying mechanisms responsible for edge states in HRPPs and will be important in guiding the rational design and development of high-performance layer$-$edge devices.

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