论文标题
基于CMOS电流参考拓扑的低功率硅应变传感器
Low-Power Silicon Strain Sensor Based on CMOS Current Reference Topology
论文作者
论文摘要
开发了受宽度自偏见的电流源拓扑启发的应变传感器，称为$β$ - 多层层，以获得具有高供应排斥反应的应变依赖性参考电流。传感器依赖于形成当前参考电路的硅MOS晶体管中的压电效应。通过在四点弯曲测试下通过实验测量进行分析计算和验证设备行为。具有集成电阻器的基本实现的应变灵敏度为2.54 Na/$με$（量规因子为324），对于52.06 Na/°C的温度灵敏度。进一步实施了基于当前减法原理的更先进的全轨道电路，以达到高达12.02 Na/$με$（1773的量规系）的应变灵敏度，温度敏感性为-28.72 Na/°C。该实现包括一个CMOS主动负载，以调整应变和温度敏感性，总功耗在20至150 $μ$ W之间。
A strain sensor inspired by a Widlar self-biased current source topology called $β$-multiplier is developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in the silicon MOS transistors that form the current reference circuit. The device behavior is analytically computed and verified with experimental measurements under four-point bending test. A basic implementation with an integrated resistor reaches a strain sensitivity of 2.54 nA/$με$ (gauge factor of 324) for a temperature sensitivity of 52.06 nA/°C. A more advanced full-transistor circuit based on current subtraction principle is furthered implemented in order to reach strain sensitivity up to 12.02 nA/$με$ (gauge factor of 1773) and temperature sensitivity of -28.72 nA/°C. This implementation includes a CMOS active load to tune the strain and temperature sensitivities with a total power consumption between 20 and 150 $μ$W.
