论文标题
使用光刻辅助化学机械蚀刻(位置),高生产率的低损失硅锂电光调节剂(位置)
High-production-rate fabrication of low-loss lithium niobate electro-optic modulators using photolithography assisted chemo-mechanical etching (PLACE)
论文作者
论文摘要
较大带宽,低插入损失,低成本和高生产率的综合薄膜(LN)电磁(EO)调节器是当代连接行业的重要因素和颠覆性应用。在这里,我们使用光刻辅助化学机械蚀刻(位置)技术证明了高性能薄膜LN EO调制器的设计和Fabri-cation。我们的设备在50 GHz上显示了3-DB带宽,以及可比的低半波电压长度为2.16 VCM。我们获得2.6 dB的纤维插入损失。
Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators of broad bandwidth, low insertion loss, low cost and high production rate are essential elements in contemporary inter-connection industries and disruptive applications. Here, we demonstrated the design and fabri-cation of a high performance thin-film LN EO modulator using photolithography assisted chemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidth over 50 GHz, along with a comparable low half wave voltage-length product of 2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.