论文标题
量子厅$ P-N $使用石墨烯Annuli交界板
Quantum Hall $p-n$ Junction Dartboards Using Graphene Annuli
论文作者
论文摘要
在毫米级的石墨烯$ P-N $接线设备上使用多个电流端子的使用，由Corbino几何形状或量子厅电阻Dartboards制造，使在$ν= 2 $ plateau（$ R_H \ r_H \ of 12906ω$ $）上测量了量化大厅电阻的几个分数倍数。实验获得的值与使用LTSpice电路模拟器进行的相应数值模拟一致。模拟了量子大厅电阻的更复杂的设计，以确定这些Corbino型设备可以输出电阻的潜在参数空间。最重要的是，这些测量值支持更简单的紫外线光刻过程，作为扩大基于石墨烯的设备尺寸的更有效方法，同时保持足够狭窄的连接。
The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $ν=2$ plateau ($R_H\approx 12906 Ω$). Experimentally obtained values agreed with corresponding numerical simulations performed with the LTspice circuit simulator. More complicated designs of the quantum Hall resistance dartboard were simulated to establish the potential parameter space within which these Corbino-type devices could output resistance. Most importantly, these measurements support simpler processes of ultraviolet lithography as a more efficient means of scaling up graphene-based device sizes while maintaining sufficiently narrow junctions.
