论文标题
ute $ _2 $的顺磁状态中的慢电子动力学
Slow Electronic Dynamics in the Paramagnetic State of UTe$_2$
论文作者
论文摘要
$^{125} $ te NMR实验（$ h $）沿易于磁化轴（$ a $轴）应用于ute $ _2 $的顺磁状态下的慢速电子动力学。观察到的缓慢波动与低于30 $ -40 K的远程电子相关性的连续增长有关，其中沿硬磁化轴（$ b $ - 轴）的自旋敏感性显示出广泛的最大值。这些实验还表明，局部少量的疾病或缺陷在局部干扰了远程电子相关性，并在低温下发展出不均匀的电子状态，从而导致$ h \ \ | a $中的大量易感性在块状易感性中观察到低温上升。我们建议UTE $ _2 $将位于电子相边界附近的顺磁侧，在那里，磁性或费米 - 表面不稳定性将是特征波动的起源。
$^{125}$Te NMR experiments in field ($H$) applied along the easy magnetization axis (the $a$-axis) revealed slow electronic dynamics developing in the paramagnetic state of UTe$_2$. The observed slow fluctuations are concerned with a successive growth of long-range electronic correlations below 30$-$40 K, where the spin susceptibility along the hard magnetization axis (the $b$-axis) shows a broad maximum. The experiments also imply that tiny amounts of disorder or defects locally disturb the long-range electronic correlations and develop an inhomogeneous electronic state at low temperatures, leading to a low temperature upturn observed in the bulk-susceptibility in $H\|a$. We suggest that UTe$_2$ would be located on the paramagnetic side near an electronic phase boundary, where either magnetic or Fermi-surface instability would be the origin of the characteristic fluctuations.
