论文标题
负电容拓扑量子磁场晶体管的建议
Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor
论文作者
论文摘要
拓扑量子场效应晶体管（TQFET）使用电场从拓扑绝缘体（“ On”，带有导电状态）转换为常规绝缘子（“ OFF”），并且由于强烈的Rashba Spin-Oractaction，子阈值较低。已经提出了许多材料，并且已经在超薄na $ {_ 3} $ bi中证明了电场转换。在这里，我们提出了负电容（NC）TQFET，该电容使用铁电的扩增电场并有可能达到非常低的开关电压和能量。讨论了实现NC-TQFET的材料挑战。
A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.
