论文标题
通过分子束外延生长的WSE2/Mose2异叶剂中的杂交和局部平坦带
Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy
论文作者
论文摘要
在特定的扭曲角度出现的动量空间中几乎局部的摩尔扁平带是实现过渡金属二分法中相关效应的关键。在这里，我们使用角度分辨的光发射光谱（ARPE）可视化范德华（Van der Waals（VDW）WSE2/MOSE2 Heterobilayer）通过分子束外观次遵守生长的Fermi水平附近的平坦带的存在。该平面乐队位于布里渊区的K点附近，宽度为数百MEV。通过将ARPES测量与密度功能理论（DFT）计算相结合，我们确认了不同域的共存，即参考2H堆叠而没有层次不良方向和具有任意扭曲角度的区域。对于2H堆叠的杂词，我们的ARPES结果显示出强大的层间杂交效应，通过互补的微拉曼光谱测量进一步证实。 V频段在K处的旋转分解为470 MEV。杂波的价最大值（VBM）位置位于伽马点。与单个1L WSE2和1L WSE2相比，伽马和K点的VBM之间的能量差为-60 MeV，这是一个明显的差异，在K处显示VBM。
Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localized near the K point of the Brillouin zone and has a width of several hundred meVs. By combining ARPES measurements with density functional theory (DFT) calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band at K is determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Gamma point. The energy difference between the VBM at Gamma and the K point is of -60 meV, which is a stark difference compared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K.
