论文标题
单层MOS中的高电流密度$ _2 $由Alo $ _x $掺杂
High Current Density in Monolayer MoS$_2$ Doped by AlO$_x$
论文作者
论文摘要
半导体需要稳定的掺杂剂，以用于晶体管，光电子和热电话中的应用。但是，对于二维（2D）材料来说，这是具有挑战性的，其中现有方法要么与常规半导体处理不相容，要么引入时间依赖性的滞后行为。在这里，我们表明低温（<200 $^\ circ $ c）子杂文计量$ _x $为单层MOS $ _2 $提供了稳定的N兴奋剂层，与电路集成兼容。这种方法达到载体密度> 2x10 $^{13} $ 1/cm $^2 $，薄板电阻低至〜7 kohm/sq，良好的接触电阻〜480 OHm.um，来自单层MOS $ _2 $的晶体管中，化学蒸汽蒸发生长。我们还达到了此三个原子厚的半导体中的近700 UA/UM（> 110 mA/cm $^2 $）的当前密度，同时保持晶体管打开/关闭电流比率> $ 10^6 $。最大电流最终受到自热的限制，并且可能会超过1 mA/um，而设备散热器更好。这种掺杂的MOS $ _2 $设备凭借其0.1 Na/um偏移，接近国际技术路线图所需的几个低功率晶体管指标
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low temperature (< 200$^\circ$ C) sub-stoichiometric AlO$_x$ provides a stable n-doping layer for monolayer MoS$_2$, compatible with circuit integration. This approach achieves carrier densities > 2x10$^{13}$ 1/cm$^2$, sheet resistance as low as ~7 kOhm/sq, and good contact resistance ~480 Ohm.um in transistors from monolayer MoS$_2$ grown by chemical vapor deposition. We also reach record current density of nearly 700 uA/um (>110 MA/cm$^2$) in this three-atom-thick semiconductor while preserving transistor on/off current ratio > $10^6$. The maximum current is ultimately limited by self-heating and could exceed 1 mA/um with better device heat sinking. With their 0.1 nA/um off-current, such doped MoS$_2$ devices approach several low-power transistor metrics required by the international technology roadmap
