论文标题
锗中天然的重孔失败模式Qubit
A natural heavy-hole flopping mode qubit in germanium
论文作者
论文摘要
双量子点（DQD）中的flopping模式量子位允许连贯的自旋光子杂交和快速量子门接合到交替的外部或量化的腔电场时。但是，为此，电子系统依赖于通过磁场梯度作为耦合机制的合成自旋轨道相互作用（SOI）。从理论上讲，在这里，我们可以通过使用较大的立方Rashba Soi来避免在锗（GE）的重孔系统中避免这种具有挑战性的实验设置。我们认为，所得的自然flopping模式值具有高度可调的自旋耦合强度，当系统设计以在我们量化的最佳操作模式下运行时，可以在纳秒范围内在纳秒范围内进行一量和双Quibent的栅极时间。
Flopping mode qubits in double quantum dots (DQDs) allow for coherent spin-photon hybridization and fast qubit gates when coupled to either an alternating external or a quantized cavity electric field. To achieve this, however, electronic systems rely on synthetic spin-orbit interaction (SOI) by means of a magnetic field gradient as a coupling mechanism. Here we theoretically show that this challenging experimental setup can be avoided in heavy-hole (HH) systems in germanium (Ge) by utilizing the sizeable cubic Rashba SOI. We argue that the resulting natural flopping mode qubit possesses highly tunable spin coupling strengths that allow for one- and two-qubit gate times in the nanosecond range when the system is designed to function in an optimal operation mode which we quantify.
