论文标题
tase $ _ {2} $ ta/ bi $ _ {2} $ se $ _ {3} $接口反应的费米表面手性手性
Fermi surface chirality induced in a TaSe$_{2}$ monosheet formed by a Ta/ Bi$_{2}$Se$_{3}$ interface reaction
论文作者
论文摘要
带有RASHBA型相互作用的拓扑绝缘体和材料中的自旋摩托锁定是新型Spintronic设备的极具吸引力的功能,因此正在进行深入研究。正在进行重大努力,以确定具有自旋摩托锁定的新材料系统,同时也可以创建具有新的Spintronic功能的异质结构。在本研究中,我们介绍了受试者并调查范德华型异质结构,由拓扑绝缘体bi $ _ {2} $ se $ _ {3} $和单个se-ta-se triple-layer(tl)h-type tase $ _ {2} $ y neface and interface interface interface and Face interface and sel and interface and interface and interface。然后,我们使用表面X射线衍射显示,Tase2样TL的对称性从D $ _ {3H} $减少到C $ _ {3V} $,这是由Tantalum原子的垂直原子移动产生的。自旋和角度分辨的光发射表明,由于对称性降低,费米表面的状态获得了一个平面内旋转组件,形成具有螺旋rashba样的旋转纹理的表面轮廓,该轮廓耦合到底物的泥浆锥。我们的方法提供了一条新的途径,可以通过相应的散装材料中不存在的接口工程来实现新型的手性二维电子系统。
Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to identify new material systems with spin-momentum locking, but also to create heterostructures with new spintronic functionalities. In the present study we address both subjects and investigate a van der Waals-type heterostructure consisting of the topological insulator Bi$_{2}$Se$_{3}$ and a single Se-Ta-Se triple-layer (TL) of H-type TaSe$_{2}$ grown by a novel method which exploits an interface reaction between the adsorbed metal and selenium. We then show, using surface x-ray diffraction, that the symmetry of the TaSe2-like TL is reduced from D$_{3h}$ to C$_{3v}$ resulting from a vertical atomic shift of the tantalum atom. Spin- and angle-resolved photoemission indicates that, owing to the symmetry lowering, the states at the Fermi surface acquire an in-plane spin component forming a surface contour with a helical Rashba-like spin texture, which is coupled to the Dirac cone of the substrate. Our approach provides a new route to realize novel chiral two-dimensional electron systems via interface engineering that do not exist in the corresponding bulk materials.