论文标题
双肖特基屏障设备的电流电压型号
A current-voltage model for double Schottky barrier devices
论文作者
论文摘要
Schottky屏障通常是在半导体/金属接触处形成的，并影响半导体设备的电气行为。特别是，肖特基屏障在研究单声道和二维纳米结构材料的调查中一直发挥着重要作用，尽管它们对当前电压特性的影响经常被忽略或误解。在这项工作中，我们提出了一个单一方程式，以描述具有Schottky接触的两端半导体设备的电流 - 电压特性。我们将方程式应用于数值模拟理想和非理想肖特基屏障的电气行为。提出的模型可用于直接估计肖特基屏障高度和理想因素。我们将其应用于完美地重现超薄钼二硫化物或钨透明质纳米片和二硫化钨硫化物纳米管的实验电流电压特性。该模型构成了与Schottky接触的任何两端设备中相关传输参数分析和提取相关传输参数的有用工具。
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical properties of mono and two-dimensional nanostructured materials, although their impact on the current-voltage characteristics has been frequently neglected or misunderstood. In this work, we propose a single equation to describe the current-voltage characteristics of two-terminal semiconductor devices with Schottky contacts. We apply the equation to numerically simulate the electrical behaviour for both ideal and non-ideal Schottky barriers. The proposed model can be used to directly estimate the Schottky barrier height and the ideality factor. We apply it to perfectly reproduce the experimental current-voltage characteristics of ultrathin molybdenum disulphide or tungsten diselenide nanosheets and tungsten disulphide nanotubes. The model constitutes a useful tool for the analysis and the extraction of relevant transport parameters in any two-terminal device with Schottky contacts.
