论文标题
从头开始模拟带有单层和几层二维材料的带对频段隧道式FET作为通道
Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels
论文作者
论文摘要
基于第一原理的全频段原子量子传输模拟用于评估带有2-D通道材料作为未来电子电路组件的带对波段隧道FET（TFET）的潜力。我们证明了单层（SL）过渡金属二核苷不太适合TFET应用。但是，可能存在各种各样的二维半导体，甚至还没有被剥落。本文指出了其中一些最有前途的候选人，以实现高效的TFET。 SL SNTE，AS，TINBR和BI都在理想情况下在0.5-V电源电压下和0.1 Na/μm的频率上递送大于100μA/μm的电流。我们表明，只要从狭窄带盖的增益超过了不断恶化的门控件的损失，从单层到多层可以提高TFET性能。最后，揭示了2-D Van der Waals的异质结TFET的表现几乎和最佳同型结构，为研究最佳2-D材料组合的研究铺平了道路。
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single-layer (SL) transition metal dichalcogenides are not well suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors that have not even been exfoliated yet; this paper pinpoints some of the most promising candidates among them to realize highly efficient TFETs. SL SnTe, As, TiNBr, and Bi are all found to ideally deliver ON-currents larger than 100μA/μm at 0.5-V supply voltage and 0.1 nA/μm OFF-current value. We show that going from single to multiple layers can boost the TFET performance as long as the gain from a narrowing bandgap exceeds the loss from the deteriorating gate control. Finally, a 2-D van der Waals heterojunction TFET is revealed to perform almost as well as the best SL homojunction, paving the way for research in optimal 2-D material combinations.
