论文标题
多效VOCL2单层中铁的特性的解耦应变响应
Decoupled Strain Response of Ferroic Properties in Multiferroic VOCl2 Monolayer
论文作者
论文摘要
二维（2D）磁电磁多表演是有望用于微型逻辑和存储器的多功能材料。在此，我们探讨了应变工程对调整最近预测的2D抗磁性 - 磁性feRroelectric，VOCL2单层的有效性。有趣的是，我们发现可以使用沿不同平面晶格矢量的单轴拉伸应变独立调整磁取顺序和电化。沿晶格载体B的4％拉伸应变诱导了从抗铁磁（AFM）基态的过渡，其平面磁化磁化强度向铁电磁（FM）基态，并具有平面磁化。另一方面，沿晶格矢量A的拉伸应变会增强自发的电化极化，而不会影响磁性排序。单层在拉伸应变下保持动态稳定，这进一步有助于提高铁磁性的库里温度以及铁电性。这种可应变的多表色材料为未来的纳米电子设备带来了巨大的承诺。
Two-dimensional (2D) magnetoelectric multiferroics are promising multifunctional materials for miniaturized logic and memory devices. Herein, we explore the effectiveness of strain-engineering for tuning the properties of a recently predicted 2D antiferromagnetic-ferroelectric, VOCl2 monolayer. Interestingly, we find that magnetic-ordering and electric polarization can be tuned independently using uniaxial tensile strain along different in-plane lattice vectors. A 4% tensile strain along lattice vector b induces a transition from an antiferromagnetic (AFM) ground state with an out-of-plane magnetization to a ferromagnetic (FM) ground state with in-plane magnetization. On the other hand, tensile strain along lattice vector a enhances spontaneous electric polarization, without affecting the magnetic ordering. The monolayers remain dynamically stable under tensile strain, which further helps to raise the Curie temperature of ferromagnetism, as well as ferroelectricity. Such a strain-tunable multiferroic material holds great promises for future generation nanoelectronic devices.
