论文标题
拓扑半学候选pd $ _ {3} $ bi $ $ _ {2} $ s $ _ {2} $的薄膜中的弱反定位
Weak Anti-localization in thin films of the Topological Semimetal Candidate Pd$_{3}$Bi$_{2}$S$_{2}$
论文作者
论文摘要
我们报告了PD $ _ {3} $ bi $ _ {2} $ s $ _ {2} $（PBS）薄膜由脉冲激光沉积（PLD）技术合成的薄膜的增长和磁传输研究。对原始和退火后电影的磁通运输研究表明，有多种类型的充电载体，其集中载载货物的集中度在$ 0.6 $ -2.26〜 \ times $ 10 $ 10 $^{21} $ cm $ $^{ - 3} $ and Amiality and Amibility usility and Amibility and Amibility and Amibility and Amibility in范围0.96-1.73 $ \ times $ 10 $ 10 $^$^$^2}在低温下，观察到电导率的对数增加，这表明存在弱反定位（WAL）。在Hikami-Larkin-Nagaoka（HLN）理论中分析了磁转运数据。发现仅电子电子散射不能解释脱缘长度的温度依赖性，而电子 - 光子散射也有助于PBS膜中的相松弛机制。
We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more than one type of charge carrier with a carrier concentration in the range $0.6$ - $2.26~\times$ 10$^{21}$ cm$^{-3}$ and mobility in the range 0.96 - 1.73 $\times$ 10$^{2}$ cm$^{2}$/Vs. At low temperatures a logarithmic increase in conductivity is observed which indicates the presence of weak anti-localization (WAL). The magnetotransport data is analysed within the Hikami-Larkin-Nagaoka (HLN) theory. It is found that temperature dependence of the dephasing length can't be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.
