论文标题
一维范德华异质结二极管
One-dimensional van der Waals heterojunction diode
论文作者
论文摘要
最近实现了一维范德华异质结构的综合，这为电子和光电中的预期应用开辟了新的可能性。均匀的尺寸将使新的特性和超出其二维对应物能力的进一步的微型化。天然掺杂导致半导体单壁碳纳米管的P型电气特性，而N型二硫化钼型具有常规贵金属触点的N型。 Therefore, we demonstrate here a one-dimensional heterostructure nanotube of 11-nm-wide, with the coaxial assembly of semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube which induces a radial semiconductor-insulator-semiconductor heterojunction.当分别将相反的电势极性应用于半导体的单壁碳纳米管和钼纳米管上时，构成了整流效果。
The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties and further miniaturization beyond the capabilities of its two-dimensional counterparts have revealed. The natural doping results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes, while n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube of 11-nm-wide, with the coaxial assembly of semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.
