论文标题

混合CMOS/MEMRISTOR电路设计方法

Hybrid CMOS/Memristor Circuit Design Methodology

论文作者

Maheshwari, Sachin, Stathopoulos, Spyros, Wang, Jiaqi, Serb, Alexander, Pan, Yihan, Mifsud, Andrea, Leene, Lieuwe B., Shen, Jiawei, Papavassiliou, Christos, Constandinou, Timothy G., Prodromakis, Themistoklis

论文摘要

RRAM技术在过去十年中经历了爆炸性的增长,并为广泛的应用开发了多个设备结构。但是,将技术从实验室转移到市场需要开发可访问且用户友好的设计流,并由行业级工具链支持。在这项工作中,我们用示例演示了基于RRAM的电子设备的端到端设计流,从将定制RRAM模型引入我们选择的CAD工具到执行包括RRAM设备在内的布局式式删除和延期后的检查。我们设想,将RRAM引入标准集成电路设计流的逐步指南将是一个有用的参考文献文档,对于希望基准测试其技术和希望尝试使用RRAM增强系统的电路设计师的设备开发人员。

RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the development of an accessible and user-friendly design flow, supported by an industry-grade toolchain. In this work, we demonstrate with examples an end-to-end design flow for RRAM-based electronics, from the introduction of a custom RRAM model into our chosen CAD tool to performing layout-versus-schematic and post-layout checks including the RRAM device. We envisage that this step-by-step guide to introducing RRAM into the standard integrated circuit design flow will be a useful reference document for both device developers who wish to benchmark their technologies and circuit designers who wish to experiment with RRAM-enhanced systems.

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