论文标题
混合CMOS/MEMRISTOR电路设计方法
Hybrid CMOS/Memristor Circuit Design Methodology
论文作者
论文摘要
RRAM技术在过去十年中经历了爆炸性的增长,并为广泛的应用开发了多个设备结构。但是,将技术从实验室转移到市场需要开发可访问且用户友好的设计流,并由行业级工具链支持。在这项工作中,我们用示例演示了基于RRAM的电子设备的端到端设计流,从将定制RRAM模型引入我们选择的CAD工具到执行包括RRAM设备在内的布局式式删除和延期后的检查。我们设想,将RRAM引入标准集成电路设计流的逐步指南将是一个有用的参考文献文档,对于希望基准测试其技术和希望尝试使用RRAM增强系统的电路设计师的设备开发人员。
RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the development of an accessible and user-friendly design flow, supported by an industry-grade toolchain. In this work, we demonstrate with examples an end-to-end design flow for RRAM-based electronics, from the introduction of a custom RRAM model into our chosen CAD tool to performing layout-versus-schematic and post-layout checks including the RRAM device. We envisage that this step-by-step guide to introducing RRAM into the standard integrated circuit design flow will be a useful reference document for both device developers who wish to benchmark their technologies and circuit designers who wish to experiment with RRAM-enhanced systems.