论文标题

通过BITONAL介电谐振器,从微波测量的Fe(Se,Te)薄膜的固定,通量流电阻率和各向异性

Pinning, flux flow resistivity and anisotropy of Fe(Se,Te) thin films from microwave measurements through a bitonal dielectric resonator

论文作者

Pompeo, Nicola, Alimenti, Andrea, Torokhtii, Kostiantyn, Sylva, Giulia, Braccini, Valeria, Silva, Enrico

论文摘要

我们报告了在Caf $ _2 $底物上生长的\ fst薄膜的涡流运动表面阻抗的各向异性。通过BitOnal Dielectric Encononator,以两个不同的频率($ \ sim16 \; $ ghz; $ \ sim16 \; $ ghz \; $ ghz \; $ ghz; $ \ sim16 \; $ ghz在固定温度下探索了对磁场强度的依赖性,并依赖于样品$ c $轴的方向。自由通量流电阻率$ρ_{ff} $是通过利用高频动力学的标准模型获得的,而角度依赖性是在已知且广泛使用的Blatter-Geshkenbein-larkin(BGL)缩放理论的andistropic SuperConconductors的框架中研究的。通过Fluxon通量流电阻率与缩放定律处方的极好一致。从缩放分析中,获得了低场质量各向异性$ \ sim1.8 $,就在文献中报告的值范围内。固定常数的角度依赖性表明,固定固定在临界电流密度测量值的一致性。

We report on the anisotropy of the vortex motion surface impedance of a \fst thin film grown on a CaF$_2$ substrate. The dependence on the magnetic field intensity up to 1.2 T and direction, both parallel and perpendicular to the sample $c$-axis, was explored at fixed temperature at two distinct frequencies, $\sim16\;$GHz and $\sim27\;$GHz, by means of bitonal dielectric resonator. The free flux flow resistivity $ρ_{ff}$ was obtained by exploiting standard models for the high frequency dynamics, whereas the angle dependence was studied in the framework of the well known and widely used Blatter-Geshkenbein-Larkin (BGL) scaling theory for anistropic superconductors. Excellent agreement with the scaling law prescription by the fluxon flux flow resistivity was obtained. From the scaling analysis, a low-field mass anisotropy $\sim1.8$ was obtained, well within the value ranges reported in literature. The angular dependence of the pinning constant suggests that pinning is dominated by random, isotropic point pins, consistently with critical current density measurements.

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