论文标题

结构,弹性,电子,热力学和光学特性的压力依赖性范德华型NASN2P2 PNICTIDE超导体:DFT研究的见解

Pressure dependence of structural, elastic, electronic, thermodynamic, and optical properties of van der Waals-type NaSn2P2 pnictide superconductor: insights from DFT study

论文作者

Parvin, F., Naqib, S. H.

论文摘要

NASN2P2是一种最近发现的超导系统,该系统属于具有范德华结构的特定材料类别。由于它们具有有趣的电气,光学,化学,热和超导状态特性,因此对这种化合物引起了极大的兴趣。我们已经研究了该准二维系统的压力依赖性结构,热物质,电子带结构和超导状态特性,首次通过Ab ISTILE技术进行了详细的详细信息。还首次研究了光学性能的光学性能。弹性各向异性指数指向NASN2P2中高水平的机械和键合各向异性,这与其高度分层的结构一致。 NASN2P2的压力依赖性超导过渡温度TC被预测随DEBYE温度的压力依赖性变化而变化很大。电子能量分散曲线揭示了高度的方向依赖性;对于平面外电荷运输,有效的电荷携带质量特别高。光学参数补充了状态特征的潜在电子能量密度,并且微弱地取决于入射电场的极化。 NASN2P2的反射率在可见区域非常高,并且在紫外线区域的扩展能量范围内保持很高和非选择性。在中部粉丝带中,吸收系数也很高。所有这些光学特征渲染适用于光电设备应用的NASN2P2。

NaSn2P2 is a recently discovered superconducting system belonging to a particular class of materials with van der Waals structure. There is enormous interest in such compounds because of their intriguing electrical, optical, chemical, thermal, and superconducting state properties. We have studied the pressure dependent structural, thermo-physical, electronic band structure, and superconducting state properties of this quasi-two dimensional system in details for the first time via ab initio technique. The optical The optical properties are also investigated for different electric field polarizations for the first time. The elastic anisotropy indices point towards high level of mechanical and bonding anisotropy in NaSn2P2 consistent with its highly layered structure. The pressure dependent superconducting transition temperature, Tc, of NaSn2P2 is predicted to vary strongly with the pressure dependent variation of Debye temperature. The electronic energy dispersion curves reveal high level of direction dependence; the effective mass of charge carries are particularly high for the out-of-plane charge transport. The optical parameters compliment the underlying electronic energy density of states features and are weakly dependent on the polarization of the incident electric field. The reflectivity of NaSn2P2 is very high in the visible region and remains quite high and non-selective over an extended energy range in the ultraviolet region. The absorption coefficient is also high in the mid-ultraviolet band. All these optical features render NaSn2P2 suitable for optoelectronic device applications.

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