论文标题
半导体的migdal效应
The Migdal effect in semiconductors
论文作者
论文摘要
当原子中的核经历碰撞时，由于migdal效应而无弹性地激发电子的可能性很小。在这封信中，我们提出了半导体中暗物质 - 核散射的migdal效应的第一个完全推导，这也解释了多月的产生。速率可以用材料的能量损失函数表示，我们通过密度功能理论（DFT）方法计算出来。由于电子激发的差距较小，我们发现半导体中米格达效应的速率高于原子靶标。因此，考虑到半导体中的Migdal效应可以显着提高诸如DAMIC，SENSEI和SUPERCDMS等实验的敏感性。
When a nucleus in an atom undergoes a collision, there is a small probability to inelastically excite an electron as a result of the Migdal effect. In this Letter, we present a first complete derivation of the Migdal effect from dark matter-nucleus scattering in semiconductors, which also accounts for multiphonon production. The rate can be expressed in terms of the energy loss function of the material, which we calculate with density functional theory (DFT) methods. Because of the smaller gap for electron excitations, we find that the rate for the Migdal effect is much higher in semiconductors than in atomic targets. Accounting for the Migdal effect in semiconductors can therefore significantly improve the sensitivity of experiments such as DAMIC, SENSEI and SuperCDMS to sub-GeV dark matter.
