论文标题
对称INAS/INGAALAS/INP量子点的光学和电子性能是由分子束外延中成熟过程形成的：宽范围的单光子电信发射器的有前途的系统
Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
论文作者
论文摘要
我们提出了一项详细的实验光学研究，该研究由嵌入在Inalgaas屏障晶体中的INAS量子点（QD）的理论模型支持，该晶格匹配到INP（001），该INP（001）随着分子束的使用中的成熟步骤的使用而生长。该方法导致平面内对称QD的低表面密度的生长，其特征在于多模式尺寸分布，导致频谱宽发射范围在$ 1.4-2.0 $ $ $ $ M $ M $ 1.4-2.0 $ $ m $ m，对于许多近乎界面的光子应用至关重要。我们发现，与INAS/INP系统相比，在此，多模式分布从连续的点族之间的QD高度的两次单层差异中产生。这可能源于稳定QD成核的第四纪屏障合金中的远距离顺序。测量频谱宽发射的光致发光（PL）寿命，我们发现几乎无散的值为$ 1.3 \ pm0.3 $ ns。最后，我们检查排放特性的温度依赖性。我们强调了润湿层中局部状态在热载体重新分布过程中扮演载体储层的作用的影响。我们确定在这些QD中的主要PL淬灭机制，确定孔逸出到Inalgaas屏障。
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emission in the range of $1.4-2.0$ $μ$m, essential for many near-infrared photonic applications. We find that, in contrast to the InAs/InP system, the multimodal distribution results here from a two-monolayer difference in QD height between consecutive families of dots. This may stem from the long-range ordering in the quaternary barrier alloy that stabilizes QD nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally broad emission, we find a nearly dispersionless value of $1.3\pm0.3$ ns. Finally, we examine the temperature dependence of emission characteristics. We underline the impact of localized states in the wetting layer playing the role of carrier reservoir during thermal carrier redistribution. We determine the hole escape to the InAlGaAs barrier to be a primary PL quenching mechanism in these QDs.
