论文标题
在室温下，超过400％的隧道磁磁力，在外延fe/mgo/fe/fe（001）旋转阀型磁性隧道连接处
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
论文作者
论文摘要
在室温（RT）（RT）（RT）和3 K时的巨型隧道磁场抗性（TMR）比在外在的Fe/Mgo/Fe/Fe/Fe/Fe（001）中证明了914％的比率，并通过将散布式的范围和范围的悬架界限结合为范围内的散布式生长条件，并通过将孔子置于跨度的范围内的范围内的范围内的跨度式悬架条件来交换。调谐。当将层在高度（001）面向的CR缓冲层上生长时，明确的TMR振荡与MGO厚度的函数，较大的峰值到valley差异约为80％。观察到的MTJ的特定特征是偏极极性的对称差分电导（DI/DV）光谱，以及| V |中DI/DV（平行构型）中的平台状深度局部最小值（平行构型）。 = 0.2〜0.5 V.在3K时，在高原di/dv中出现了两个倾角的细胞结构，反映了通过Fe/mgo/fe高度相干的隧道。我们还通过2.24 nm-thick-cofe插入在RT处观察到496％的TMR比在底部FE/MGO界面上。
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.
