论文标题

经典数据的基于电路的量子随机访问存储器具有连续幅度

Circuit-based quantum random access memory for classical data with continuous amplitudes

论文作者

de Veras, Tiago M. L., de Araujo, Ismael C. S., Park, Daniel K., da Silva, Adenilton J.

论文摘要

在几个量子计算应用程序中,需要将数据加载数据。没有有效的加载过程,初始化算法的成本可以主导整体计算成本。名为FF-QRAM的基于电路的量子随机访问存储器可以使用计算成本O(CMN)加载M n位模式,以加载C的连续数据,其中C依赖数据分布。在这项工作中,我们提出了一种策略,以使用计算成本O(MN)而无需选择后进行连续数据。所提出的方法基于概率量子内存,一种在量子设备中加载二进制数据的策略以及使用标准量子门加载FF-QRAM,并且适合嘈杂的中间尺度量子计算机。

Loading data in a quantum device is required in several quantum computing applications. Without an efficient loading procedure, the cost to initialize the algorithms can dominate the overall computational cost. A circuit-based quantum random access memory named FF-QRAM can load M n-bit patterns with computational cost O(CMn) to load continuous data where C depends on the data distribution. In this work, we propose a strategy to load continuous data without post-selection with computational cost O(Mn). The proposed method is based on the probabilistic quantum memory, a strategy to load binary data in quantum devices, and the FF-QRAM using standard quantum gates, and is suitable for noisy intermediate-scale quantum computers.

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