论文标题
通过结构修改控制金属有机框架中通过空间电荷传输的策略
Strategies for controlling through-space charge transport in metal-organic frameworks via structural modifications
论文作者
论文摘要
近年来,金属有机框架(MOF)的电荷运输已转移到科学研究的重点。在这种情况下,特别感兴趣的是由PI堆叠共轭连接器产生的有效通过空间电荷传输途径的系统。在当前的手稿中,我们使用基于密度函数理论的模拟来提供对此类MOF的详细理解,在当前情况下,该理解源自原型ZN2(TTFTB)系统。特别是我们表明,诸如相邻接头的相对布置以及单个构件的结构构象的细节诸如对频带宽度和电荷传递的深远影响。考虑到围绕螺钉轴的单个四脂腔(TTF)分子的螺旋堆积为Zn2(TTFTB)衍生的材料中的主要对称元件,此处的重点主要是相邻分子相对旋转的影响。并非出乎意料的是,螺旋中的堆叠距离也起着独特的作用,尤其是对于结构,它们显示出较大的电子耦合。提出的结果为通过改进的电子耦合而实现结构提供了指南。但是,还表明结构缺陷(尤其是缺失的接头)为在研究的,本质上是一维系统中充电的运输提供了主要障碍。这表明尤其是样品质量是确保由堆叠PI系统组成的MOF中有效通过空间电荷传输的决定性因素。
In recent years, charge transport in metal-organic frameworks (MOFs) has shifted into the focus of scientific research. In this context, systems with efficient through-space charge transport pathways resulting from pi-stacked conjugated linkers are of particular interest. In the current manuscript, we use density functional theory based simulations to provide a detailed understanding of such MOFs, which in the present case are derived from the prototypical Zn2(TTFTB) system. In particular we show that factors like the relative arrangement of neighboring linkers and the details of the structural conformations of the individual building blocks have a profound impact on band widths and charge transfer. Considering the helical stacking of individual tetrathiafulvalene (TTF) molecules around a screw axis as the dominant symmetry element in Zn2(TTFTB)-derived materials, the focus here is primarily on the impact of the relative rotation of neighboring molecules. Not unexpectedly, also changing the stacking distance in the helix plays a distinct role, especially for structures, which display large electronic couplings to start with. The presented results provide guidelines for achieving structures with improved electronic couplings. It is, however, also shown that structural defects (especially missing linkers) provide major obstacles to charge transport in the studied, essentially one-dimensional systems. This suggests that especially the sample quality is a decisive factor for ensuring efficient through-space charge transport in MOFs comprising stacked pi-systems.