论文标题
平面大厅效应是由Mn $ _3 $ ge的反铁磁性域墙的记忆引起的
Planar Hall effect caused by the memory of antiferromagnetic domain walls in Mn$_3$Ge
论文作者
论文摘要
在Mn $ _3 $ x（x = sn，ge）抗Fiferromagnets域壁很厚且非常复杂，因为每个域中旋转的非旋转布置。最近在Mn $ _3 $ SN的磁滞回路内观察到了平面霍尔效应（PHE），这是垂直于施加电流但与应用磁场平行的电场。 PHE的迹象显示出通过磁场及其历史记录的先前方向调节的记忆。我们介绍了Mn $ _3 $ ge从室温延伸至2 K的研究研究，并表明可以通过磁场或热循环来操纵这种记忆效果。我们表明，如果先前的磁场超过0.8 T或温度超过$ T_ \ Mathrm {n} $，则可以消除内存。我们还发现，零场和场热循环的PHE振幅之间有可检测的差异。随着温度从2 K增加到$ t _ {\ rm {n}} $，PHE和异常大厅效应（AHE）之间的比率略有下降，跟踪磁化的温度依赖性。可擦除的内存效果可用于数据存储。
In Mn$_3$X (X=Sn, Ge) antiferromagnets domain walls are thick and remarkably complex because of the non-collinear arrangement of spins in each domain. A planar Hall effect (PHE), an electric field perpendicular to the applied current but parallel to the applied magnetic field, was recently observed inside the hysteresis loop of Mn$_3$Sn. The sign of the PHE displayed a memory tuned by the prior orientation of the magnetic field and its history. We present a study of PHE in Mn$_3$Ge extended from room temperature down to 2 K and show that this memory effect can be manipulated by either magnetic field or thermal cycling. We show that the memory can be wiped out if the prior magnetic field exceeds 0.8 T or when the temperature exceeds $T_\mathrm{N}$. We also find a detectable difference between the amplitude of PHE with zero-field and field thermal cycling. The ratio between the PHE and the anomalous Hall effect (AHE) decreases slightly as temperature is increased from 2 K to $T_{\rm{N}}$, tracks the temperature dependence of magnetization. This erasable memory effect may be used for data storage.
