论文标题

芯片高阶拓扑微机械超材料

On-chip higher-order topological micromechanical metamaterials

论文作者

Wu, Ying, Yan, Mou, Wang, Hai-Xiao, Li, Feng, Jiang, Jian-Hua

论文摘要

高阶拓扑绝缘子表现出多维拓扑物理和独特的应用值,因为它们能够在单个芯片中多个维度集成稳定的边界状态。但是,对于高频机械系统中的信号处理应用,当前对高阶拓扑机械材料的实现仍然限于用于Kilohertz或较低频率的大型系统。在这里,我们报告了对高频机械波的高阶拓扑绝缘子的片上微机械超材料的实验观察。较高的拓扑语音带隙是由布里鲁因区角的带反转引起的,这是通过配置在硅芯片上蚀刻的椭圆柱的方向来实现的。通过一致的实验和理论,我们证明了由高阶带拓扑引起的Megahertz频率制度中拓扑边缘和角状态的共存。具有高阶拓扑的片上微机械超材料的实验实现为基于Megahertz机械波的应用打开了一个综合平台的应用,在该平台中,边缘和角状态分别充当稳定的波导和谐振器。

Higher-order topological insulators exhibit multidimensional topological physics and unique application values due to their ability of integrating stable boundary states at multiple dimensions in a single chip. However, for signal-processing applications in high-frequency mechanical systems, the current realizations of higher-order topological mechanical materials are still limited to large-scale systems for kilohertz or lower frequencies. Here, we report the experimental observation of a on-chip micromechanical metamaterial as higher-order topological insulator for high-frequency mechanical waves. The higher-order topological phononic band gap is induced by the band inversion at the Brillouin zone corner which is achieved by configuring the orientations of the elliptic pillars etched on the silicon chip. With consistent experiments and theory, we demonstrate the coexistence of topological edge and corner states in the megahertz frequency regime as induced by the higher-order band topology. The experimental realization of on-chip micromechanical metamaterials with higher-order topology opens a regime for applications based on megahertz mechanical waves in an integrated platform where the edge and corner states act as stable waveguides and resonators, respectively.

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