论文标题
底物 - 表面重建和定向对Mote $ _2 $/euo中旋转 - 瓦利两极化的影响
Effects of substrate-surface reconstruction and orientation on spin-valley polarization in MoTe$_2$/EuO
论文作者
论文摘要
我们研究了Mote $ _2 $单层（111）和（001）基于第一原理计算的铁磁半导体EUO的旋转谷化极化。我们考虑EUO的表面重建（111）。我们发现，与理想的EUO（111）相反，重建的EUO（111）和Mote $ _2 $覆盖剂之间没有直接的化学键合（111）。但是，MOTE $ _2 $的州与基板状态之间存在很大的杂交，这对山谷产生了重大影响。由于磁接近效应而引起的山谷极化取决于界面结构的细节，该界面结构的细节在几MEV至约40 MeV的范围内。这些值至少比理想EUO引起的值小（111）小。当Mote $ _2 $单层与EUO（001）连接时，山谷极化约为3.2 meV，对接口结构不敏感。通过低能有效的哈密顿模型，EUO诱导的有效Zeeman场约为27 t，与通过实验获得的WSE $ _2 $/EU相当。
We investigate the spin-valley polarization in MoTe$_2$ monolayer on (111) and (001) surfaces of ferromagnetic semiconductor EuO based on first-principles calculations. We consider surface reconstructions for EuO(111). We find that there is no direct chemical bonding between the reconstructed EuO(111) and the MoTe$_2$ overlayer, in contrast to the case of the ideal EuO(111). However, there is a strong hybridization between the states of MoTe$_2$ and the substrate states, which has a substantial impact on the valleys. The valley polarization due to the magnetic proximity effect is dependent on the detail of the interface structure, which is in the range of a few meV to about 40 meV. These values are at least one order of magnitude smaller than that induced by the ideal EuO(111). When the MoTe$_2$ monolayer is interfaced with EuO(001), the valley polarization is about 3.2 meV, insensitive to the interface structure. By a low-energy effective Hamiltonian model, the effective Zeeman field induced by EuO(001) is about 27 T, comparable to that for WSe$_2$/EuS obtained by experiment.
