论文标题
通过原位和操作扫描隧道显微镜研究的石墨烯-NI（100）界面的应变释放
Strain release at the graphene-Ni(100) interface investigated by in-situ and operando scanning tunnelling microscopy
论文作者
论文摘要
界面应变可以显着影响低维材料的机械，电子和磁性。在这里，我们通过扫描隧道显微镜研究了不匹配界面引入的应力如何影响在此过程中实时实时在Ni（100）表面上生长的石墨烯（GR）层的结构。应变释放似乎是控制形态学的主要因素，与两个同时驱动力的相互作用：在一侧，需要通过形成Moiré图案获得二维最佳注册表，而另一侧的需要，需要将镍型型号转变为local flake，以使镍层转变为最佳的一维内在匹配，从而成长。我们的工作表明，通过在一维界面上剥削菌株在纳米级处调整二维膜在纳米级的局部特性的可能性。
Interface strain can significantly influence the mechanical, electronic and magnetic properties of low-dimensional materials. Here we investigated by scanning tunneling microscopy how the stress introduced by a mismatched interface affects the structure of a growing graphene (Gr) layer on a Ni(100) surface in real time during the process. Strain release appears to be the main factor governing morphology, with the interplay of two simultaneous driving forces: on the one side the need to obtain two-dimensional best registry with the substrate, via formation of moiré patterns, on the other side the requirement of optimal one-dimensional in-plane matching with the transforming nickel carbide layer, achieved by local rotation of the growing Gr flake. Our work suggests the possibility of tuning the local properties of two-dimensional films at the nanoscale through exploitation of strain at a one-dimensional interface.
