论文标题
N极gan/ALN谐振隧道二极管
N-polar GaN/AlN resonant tunneling diodes
论文作者
论文摘要
N极极gan/Aln共振隧穿二极管在单晶N极gan散装底物上通过等离子体辅助的分子束外观外观生长实现。室温电流电压特性揭示了负差分电导（NDC）区域，峰值隧穿电流为6.8 $ \ pm $ \ pm 0.8 ka/cm $^2 $在〜8 V的正向偏置下。在反向偏置下，偏振诱导的阈值在〜$ 4 v中均具有差异。金属极线对应，确认RTD的N极性。当设备在NDC区域偏置时，在外部电路中产生电子振荡，证明了共振隧穿现象的稳健性。与金属极线RTD相反，N极性结构在谐振隧道腔的顶部具有发射极。结果，该设备体系结构开辟了通过谐振隧道注入$ - $ $ $ $ $ $ $ $ $ $的异国情调的材料的可能性，该材料具有III氮化物半导体，提供了探索新设备物理的途径。
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential conductance (NDC) region with a peak tunneling current of 6.8$\pm$ 0.8 kA/cm$^2$ at a forward bias of ~8 V. Under reverse bias, the polarization-induced threshold voltage is measured at ~$-$4 V. These resonant and threshold voltages are well explained with the polarization field which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the RTDs. When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the resonant tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the resonant tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing$-$via resonant tunneling injection$-$a wide range of exotic materials with III-nitride semiconductors, providing a route to explore new device physics.
