论文标题
波导氮化硅平台上的高性能磁光隔离器和循环器
Waveguide integrated high performance magneto-optical isolators and circulators on silicon nitride platforms
论文作者
论文摘要
光学隔离器和循环器对于光子综合电路(图片)是必不可少的。尽管在硅硅(SOI)平台上取得了重大进展,但很少在氮化硅(SIN)平台上报告集成的光学隔离器和循环器。在本文中,我们报告了基于标准的硅光子铸造工艺和磁光薄膜沉积的磁化平台上的磁光(MO)隔离器的整体整合。我们成功地将高质量的Mo Garnet薄膜种在罪上,大型法拉第旋转至-5900 ver/cm。在优化的设备设计中,我们显示了MO/SIN波导的优点(FOM)的优点(FOM)的优点(FOM)。我们演示了TM/TE模式宽带和窄带光学隔离器和循环器,并具有高隔离比,低频道和低插入损失的犯罪。特别是,我们在1570.2 nm波长下观察到1 dB插入损失和28 dB隔离比。罪恶的低热态系数也确保了设备的出色温度稳定性。我们的作品为在罪恶平台上集成高性能非销售光子设备铺平了道路。
Optical isolators and circulators are indispensable for photonic integrated circuits (PICs). Despite of significant progress in silicon-on-insulator (SOI) platforms, integrated optical isolators and circulators have been rarely reported on silicon nitride (SiN) platforms. In this paper, we report monolithic integration of magneto-optical (MO) isolators on SiN platforms with record high performances based on standard silicon photonics foundry process and magneto-optical thin film deposition. We successfully grow high quality MO garnet thin films on SiN with large Faraday rotation up to -5900 deg/cm. We show a superior magneto-optical figure of merit (FoM) of MO/SiN waveguides compared to that of MO/SOI in an optimized device design. We demonstrate TM/TE mode broadband and narrow band optical isolators and circulators on SiN with high isolation ratio, low cross talk and low insertion loss. In particular, we observe 1 dB insertion loss and 28 dB isolation ratio in a SiN racetrack resonator-based isolator at 1570.2 nm wavelength. The low thermo-optic coefficient of SiN also ensures excellent temperature stability of the device. Our work paves the way for integration of high performance nonreciprocal photonic devices on SiN platforms.