论文标题
接触电阻评估和黑磷场晶体管技术的高频性能投影
Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies
论文作者
论文摘要
在这项工作中，先前报道的不同技术的黑磷（BP）现场效应晶体管（FET）的接触质量的评估是通过基于单个设备实践特征的有效且可靠的接触电阻提取方法进行的。使用此处使用的Y功能方法与使用其他方法获得的参考值以及考虑内部值以及涉及制造的测试结构的更昂贵的方法获得的参考值之间的提取值之间达成了良好的一致性。该方法可以直接评估同一技术中的不同步骤，并包含接触特性的温度依赖性。通道现象对提取的接触电阻值没有影响。根据提取的接触电阻，获得了用于制造设备的高频性能预测。
In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of an efficient and reliable contact resistance extraction methodology based on individual device practical characteristics. A good agreement is achieved between the extracted values with the Y-function method used here and reference values obtained with other methods considering internal values as well as with more expensive methods involving fabricated test structures. The method enables a direct evaluation of different steps in the same technology and it embraces the temperature dependence of the contact characteristics. Channel phenomena have no impact on the extracted contact resistance values. High-frequency performance projections are obtained for fabricated devices based on the extracted contact resistance.
