论文标题
拓扑抗fiferromagnet mnbi $ _2 $ te $ _4 $
Infrared study of the multiband low-energy excitations of the topological antiferromagnet MnBi$_2$Te$_4$
论文作者
论文摘要
使用红外光谱学，我们研究了拓扑抗fiferromagnet Mnbi $ _2 $ te $ _4 $的批量电子特性，并使用$ t_n \ simeq 25〜 \ mathrm {k} $。在频段结构计算的支持下，我们分配了内部和边界间激发，并确定$ e_g \ \ $ 0.17 eV的带隙。我们还获得了两种具有光和非常沉重的载体的传导带的证据。 The multiband free carrier response gives rise to an unusually strong increase of the combined plasma frequency, $ω_{\mathrm{pl}}$, below 300 K. The band reconstruction below $T_N$, yields an additional increase of $ω_{\mathrm{pl}}$ and a splitting of the transition between the two conduction bands by about 54 meV.因此，我们的研究揭示了一个复杂且依赖温度的多波段低能反应，这对研究表面状态和设备应用具有重要意义。
With infrared spectroscopy we studied the bulk electronic properties of the topological antiferromagnet MnBi$_2$Te$_4$ with $T_N \simeq 25~\mathrm{K}$. With the support of band structure calculations, we assign the intra- and interband excitations and determine the band gap of $E_g \approx$ 0.17 eV. We also obtain evidence for two types of conduction bands with light and very heavy carriers. The multiband free carrier response gives rise to an unusually strong increase of the combined plasma frequency, $ω_{\mathrm{pl}}$, below 300 K. The band reconstruction below $T_N$, yields an additional increase of $ω_{\mathrm{pl}}$ and a splitting of the transition between the two conduction bands by about 54 meV. Our study thus reveals a complex and strongly temperature dependent multi-band low-energy response that has important implications for the study of the surface states and device applications.
