论文标题
反铁磁性拓扑绝缘子MNBI $ _2 $ TE $ _4 $中的本机缺陷
Native Defects in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$
论文作者
论文摘要
使用扫描隧道显微镜和光谱法，我们可视化了反铁磁拓扑绝缘子中的天然缺陷$ \ mathrm {mnbi_2te_4} $。两个本机缺陷$ \ mathrm {mn_ {bi}} $和$ \ mathrm {bi_ {te}} $ antisites可以在地形图像中很好地解决。 $ \ mathrm {mn_ {bi}} $倾向于抑制传导带边缘的状态密度。光谱成像揭示了$ \ sim80 $ 〜MEV以下的局部峰状局部密度。对地形图和光谱图像的仔细检查，结合了密度功能理论计算，这表明这是$ \ mathrm {bi_ {mn}} $ antisites在Mn站点的造成的。 $ \ mathrm {mn_ {bi}} $和$ \ mathrm {bi_ {mn}} $ antisites的随机分布导致$ \ mathrm {mnbi_2te_4} $ in Fermi级别附近状态的局部密度的空间波动。
Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$. Two native defects $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $\mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $\sim80$~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from $\mathrm{Bi_{Mn}}$ antisites at Mn sites. The random distribution of $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Mn}}$ antisites results in spatial fluctuation of local density of states near the Fermi level in $\mathrm{MnBi_2Te_4}$.
