论文标题
原子上薄的半导体中的层间激子 - 棕榈
Interlayer exciton-polaron in atomically thin semiconductors
论文作者
论文摘要
预测，一种新型类型的激子 - phonon结合状态 - 层间极化子 - 在双层二维半导体中，以过渡金属二核代源为例。在这些系统中，层间激子与范德华力和弯曲刚度引起的平面外晶格振动的软模式的相互作用产生了结合的准粒子。计算和分析了用于弱和强的phonon耦合方案的形成极性和强大激子耦合方案的能量和有效质量。讨论了这些影响在运输和光谱相关的实验中的可能表现。
A novel type of exciton-phonon bound state -- interlayer polaron -- in a double-layer two-dimensional semiconductor with transition metal dichalcogenides as an example, is predicted. In these systems the interaction of the interlayer exciton with the soft modes of out-of-plane lattice vibrations caused by van der Waals forces and flexural rigidity gives rise to a bound quasiparticle. The energy and effective mass of the formed polaron for weak and strong exciton-phonon coupling regimes are calculated and analyzed. Possible manifestations of these effects in transport- and spectroscopy-related experiments are discussed.
