论文标题
高反射率III氮化物的金属有机化学蒸气沉积在Si底物上分布的Bragg反射器
Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates
论文作者
论文摘要
通过MOCVD沉积在SI（111）底物上，高降压组III二硝酸盐分布的Bragg反射器（DBR）。首次证明了大于96％的反射率，该反射率首次显示了一个以止环为中心的ALN/GAN DBR，其止波线以可见光光谱的蓝绿色范围为中心。在DBR结构上生长了无裂纹的GAN帽层，以证明在该材料中构建III-氮化物光电设备的机会。由于gan帽层被证明是无菌株的，但由于在不匹配的底物上生长，DBR结构处于显着应变。
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. The DBR structure was under significant strain due to growth on a mismatched substrate although the GaN cap layer was shown to be strain free.
