论文标题
电力电子设备的β-GA2O3 MOCVD的机遇和挑战
Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
论文作者
论文摘要
边缘定义的薄膜喂养技术在β-GA2O3的散装晶体生长方面的最新突破导致了大面积β-GA2O3底物的商业化。标准外延方法正在用于开发各种基于薄膜的基于贝塔β2O3的设备，包括横向晶体管。本文将讨论β-GA2O3的金属有机化学蒸气沉积（MOCVD）以及在电力电子设备结构中使用该材料系统的设计标准。
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.
