论文标题
MOS $ _2 $ nanosheets的登机口控制现场排放电流
Gate-controlled field emission current from MoS$_2$ nanosheets
论文作者
论文摘要
通过化学蒸气沉积在SIO $ _2 $ _2 $/SI底物上获得的单层钼二硫化物（MOS $ _2 $）纳米片被利用用于制造具有N型型晶体管，具有N型型晶体管，高度/偏离的比率，高率，陡峭的Subthres Slope和良好的迁移率。晶体管通道电导随着氧气和水的脱附而增加的气压增加。 MOS $ _2 $纳米片的边缘的局部场排放测量是使用尖端形阳极在高真空中进行的。已证明，应用于SI基板后门的电压调节场发射电流。这样的发现，我们将MOS $ _2 $电子亲和力的栅极偏置降低归因于门偏置，因此可以基于场发射的新现场效应晶体管。
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS$_2$ electron affinity, enables a new field-effect transistor based on field emission.
