论文标题
基于光子积分电路的幂和光谱表征，例如镜头
Power and spectral characterization of photonic integrated circuit based axicon like lens
论文作者
论文摘要
我们展示了使用低分辨率（200 nm特征大小，250 nm GAP）深脉络膜图谱制造的片上硅硅启用硅（SOI）axicon axicon蚀刻。 axicon由圆形光栅组成，七个阶段为1x2多模干涉仪。我们提出了一种通过将圆圈分解成弧线的技术，可以使光栅方面的弧形变化，从而成功地将光栅的渗透深度从$ \ $ \ $ \ $ 5 $μ$ m增加到$ \ $ \ $ \ $ \ $ 55 $ m $ m。我们通过将1300 $ \ pm的耦合$ 50 nm扫源激光扫描到来自axicon的芯片中，并测量光栅耦合器的外耦合光，从而表征了设备的性能。此外，我们还介绍了用于设备光谱表征的平衡同源检测方法的实现，并表明axicon的输出叶的位置随波长而没有显着变化。
We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2 multimode interferometers. We present a technique to apodize the gratings azimuthally by breaking up the circles into arcs which successfully increased the penetration depth in the gratings from $\approx$5 $μ$m to $\approx$55 $μ$m. We characterize the device's performance by coupling 1300$\pm$50 nm swept source laser in to the chip from the axicon, and measuring the out-coupled light from a grating coupler. Further, we also present the implementation of balanced homodyne detection method for the spectral characterization of the device and show that the position of the output lobe of the axicon does not change significantly with wavelength.
